| AVS 54th International Symposium | |
| Surface Science | Thursday Sessions |
| Session SS2+EM+TF-ThA |
| Session: | Organics and Carbon Films on Silicon |
| Presenter: | J.M. Buriak, University of Alberta, Canada |
| Authors: | J.M. Buriak, University of Alberta, Canada D. Wang, University of Alberta, Canada Y. Qiao, University of Alberta, Canada J. Chai, University of Alberta, Canada |
| Correspondent: | Click to Email |
The chemistry of semiconducting surfaces is a field of intense interest, not only for the prospect of exciting cutting edge applications, but also from a fundamental perspective.1 Control over the surface reactivity of silicon and other semiconducting materials is critical for interfacing new molecular devices on chips and other nanotechnological applications, and to perhaps replace oxide overlayers as feature sizes on transistors become smaller than 50 nm. In this talk, we will attempt to provide a preliminary reactivity 'road map' towards understanding the organometallic surface chemistry of silicon that, interestingly, can vary greatly from that of silicon-based molecules. For example, by using the silicon surface as an electrode, electrochemistry can drive reactions that have no obvious parallels with molecular chemistry. As a result, molecules as diverse as alkynes and tetraalkylammonium salts can serve as organic sources to prepare organic monolayers directly on silicon, bound through Si-C bonds.2 We will also discuss our latest results concerning the patterning of silicon surface reactivity on the nanoscale (features sizes<30 nm); both conjugated organic monolayers and monodisperse metallic nanocrystallites can be interfaced directly to the surface of silicon for a variety of applications.
1 Buriak, J. M. "Organometallic Chemistry on Silicon and Germanium Surfaces", Chemical Reviews, 2002, 102, 1271-1308.
2 Wang, D.; Buriak, J. M. "Trapping Silicon Surface-Based Radicals", Langmuir, 2006, 22 6214-6221.