AVS 54th International Symposium
    Surface Science Friday Sessions
       Session SS2+EM+TF-FrM

Paper SS2+EM+TF-FrM5
Mechanistic Aspects of Organic Thin Film Growth from Energetic Sources: Insights from Experiment and Molecular Dynamics Simulations

Friday, October 19, 2007, 9:20 am, Room 611

Session: Organic Films II: Semiconductors and C@sub 60@
Presenter: J.E. Goose, Cornell University
Authors: J.E. Goose, Cornell University
A.S. Killampalli, Cornell University
P. Clancy, Cornell University
J.R. Engstrom, Cornell University
Correspondent: Click to Email

We have used a combination of experiments and molecular dynamics simulations to investigate the fundamental molecular mechanisms contributing to the evolution and final morphology of thin films of pentacene deposited at hyperthermal incident kinetic energies (Ei = 1-10 eV). Experimentally, using supersonic molecular beam scattering techniques and atomic force microscopy we have characterized the adsorption probability as a function of both Ei and the angle of incidence (θi). Interestingly, we observe differences in the dynamics of adsorption for pentacene interacting with a clean SiO2 substrate (submonolayer growth) vs. a SiO2 substrate covered by a pentacene thin film (multilayer growth). Specifically, for Ei greater than ~ 1-2 eV, contribution of a new mechanism for pentacene adsorbing on pentacene is implicated. To determine the nature of this mechanism, we have used the non-reactive empirical MM3 potential to model the collision of pentacene molecules with a pentacene thin film using molecular dynamics. Our simulation cell consists of ca. 100 molecules, and includes an upper terrace of 4 x n unit cells, bounded by (010) step edges. Accounting for impacts both near the middle of the terrace and near the step edge, our results from simulation for the probability of adsorption compare very well with those measured experimentally. In particular, adsorption is found to decrease with increasing Ei, and, in general, with increasing θi. More importantly, the simulations give us insight into nature of the events that occur at high incident kinetic energies. For thermal incident kinetic energies we observe mostly simple trapping (molecular adsorption), with near unit probability. At higher Ei of 1-5 eV, a significant fraction of molecules (~ 30%) are found to directly insert into the upper terrace, whereas a higher fraction (~ 90%) of molecules impacting near the step edge in this same energy regime also end up incorporating into the upper terrace. Indeed, direct molecular insertion into the pentacene crystal structure is the dominant interlayer process when both the molecule’s orientation and incident angle are aligned normal to the surface, which leads to the formation of interstitials for the time scale of these simulations.