| AVS 54th International Symposium | |
| Surface Science | Thursday Sessions |
| Session SS-ThP |
| Session: | Surface Science Poster Session |
| Presenter: | R.E. Butera, University of Illinois at Urbana-Champaign |
| Authors: | R.E. Butera, University of Illinois at Urbana-Champaign A. Agrawal, University of Illinois at Urbana-Champaign J.H. Weaver, University of Illinois at Urbana-Champaign |
| Correspondent: | Click to Email |
The dissociative chemisorption of Cl on Si(114) was studied at room temperature using scanning tunneling microscopy (STM). Si(114) is a stable, planar, single-domain, high-index surface composed of rebonded atoms, dimers, and tetramers each aligned in rows along [-110]. STM imaging shows preferential Cl-termination of rebonded atom and dimer sites over tetramer sites. Moreover, the prevalence of specific chlorinated tetramer configurations reveals that dissociation is sufficiently exothermic that Cl can interrogate the potential energy landscape to find a local minimum. A 10 minute anneal at 550 K facilitates diffusion and allows the system to reach the equilibrium configuration. Sequential exposure and annealing cycles reveal a coverage-dependent site occupancy dictated by surface π-bonding. This study provides the necessary starting point for a thorough investigation of the structural implications of halogen etching where we find preferential desorption and novel pattern formation.