| AVS 54th International Symposium | |
| Surface Science | Thursday Sessions |
| Session SS-ThP |
| Session: | Surface Science Poster Session |
| Presenter: | H. Shim, Inha University, South Korea |
| Authors: | H. Shim, Inha University, South Korea L. Zhang, Inha University, South Korea Y. Kim, Inha University, South Korea G. Lee, Inha University, South Korea |
| Correspondent: | Click to Email |
Adsorption of submonolayer Au on Si (111)-(7x7) surface at different substrate temperature was investigated using STM. At room temperature deposition, the Au adsorption on Si (111)-(7x7) typically features coexistence two species, high-lighted triangles and clusters confined within half-unit cells. The high-lighted triangles are dominant at a very low coverage, but give way to clusters with various sizes as the coverage increases. Slightly heating the substrate (below 150 C) during deposition also decreases the number of the highlighted triangles. The clusters, mostly confined within half unit cells for the deposition at substrate temperatures below about 350 C, coalesce to cover the borders of the half unit cells when substrate temperature increases. Vacancies and disorders are created near the clusters, suggesting the incorporation of Si atoms into the clusters at the heated substrate. At about 550 C deposition, the Au adsorption leads (5x2) reconstruction in the form of characteristic island-hole pairs on terrace or only (5x2) islands at the step edge. The evolution of the Au-adsorbed surfaces with substrate temperature during deposition will be discussed and compared with that of the room temperature deposition and post annealing.