AVS 54th International Symposium
    Advanced Surface Engineering Wednesday Sessions
       Session SE-WeM

Paper SE-WeM1
High Rate Deposition of Photocatalytic TiO2 Films by dc Magnetron Sputtering using a TiO2-x Target

Wednesday, October 17, 2007, 8:00 am, Room 617

Session: Photocatalytic Coatings
Presenter: Y. Sato, Aoyama Gakuin University, Japan
Authors: Y. Sato, Aoyama Gakuin University, Japan
A. Uebayashi, Aoyama Gakuin University, Japan
N. Ito, Aoyama Gakuin University, Japan
T. Kamiyama, Asahi Glass Ceramics Co.,Ltd., Japan
Y. Shigesato, Aoyama Gakuin University, Japan
Correspondent: Click to Email

Sputter deposition should be the most promising technique for the uniform coatings in large area with very high durability and strong adhesion. However, the deposition rate of TiO2 films by conventional reactive sputtering using a Ti metal target is very low, because the target surface should be fully oxidized (in "oxide mode") in order to deposit stoichiometric TiO2 films. Recently, a slightly reduced TiO2-x target (2-x = 1.986, Resistivity: 0.27 Ωcm) has been developed. Using this TiO2-x target TiO2 film deposition by dc sputtering with rater high rate and high durability should be possible. TiO2 films were deposited on alkali-free glass substrate at RT-400°C by dc magnetron sputtering using the TiO2-x target under 3.0 Pa. O2 flow ratio during deposition was controlled from 0 to 100%. The variation in the deposition as a function of O2 flow ratio did not show hysteresis curve at "transition region" as can be seen in the case of using Ti metal target, indicating that the TiO2-x target surface was gradually oxidized with increasing O2 flow ratio. The deposition rate using TiO2-x target under 100% Ar gas was about 5 times higher than that using Ti metal target in "oxide mode". XRD patterns of the films deposited at O2 flow at 0-5% showed entirely amorphous structure. After postannealing in air at higher than 200°C for 1 hour, these films changed to polycrystalline anatase TiO2 and showed excellent photocatalytic activities such as photo-decomposition of acetaldehyde (CH3CHO) or photo-induced hydrophilicity. Furthermore, we carried out in-situ analyses on the sputtering processes using the different sputtering target. A quadrupole mass spectrometer (QMS, AQ-360, ANELVA) combined with a specially designed energy analyzer revealed that high-energy O- ion flux was detected clearly even in the sputtering with 100% Ar gas in the case of using the TiO2-x target. Whereas in the case of using Ti metal target the O- ion flux was detected only in the "oxide mode". The sputtered fragments mass analyses showed that Ti+ and TiO+ existed as sputtered particles in case of using the TiO2-x target under O2 flow ratio from 0 to 100 %, which was the same result as in the case of using the Ti metal target in the "oxide mode".