| AVS 54th International Symposium | |
| Nanometer-scale Science and Technology | Tuesday Sessions |
| Session NS-TuP |
| Session: | Nanometer-scale Science and Technology Poster Session I |
| Presenter: | J. Choi, Wayne State University |
| Authors: | J. Choi, Wayne State University G.S. Khara, Wayne State University |
| Correspondent: | Click to Email |
Flipping of atomic image contrast of graphite is studied by using scanning tunneling microscopy (STM) and spectroscopy (STS). Tunneling gap-distance, gap-voltage and bias polarity play an important role in the flipping of atomic image contrast. The study revealed that the flipping of atomic image contrast is natural because of the electronically active and mechanically soft beta-carbon atoms of graphite. The brightest contrast in the scanning tunneling microscopic images does not always represent a specific site of graphite such as beta-site. The flipping mechanism of atomic image contrast will be discussed.