| AVS 54th International Symposium | |
| Nanometer-scale Science and Technology | Tuesday Sessions |
| Session NS-TuP |
| Session: | Nanometer-scale Science and Technology Poster Session I |
| Presenter: | J.-H. Lim, Korea University |
| Authors: | J.-H. Lim, Korea University H.J. Ji, Korea University G.E. Jeong, Korea University G.T. Kim, Korea University J.S. Ha, Korea University S.-J. Kahng, Korea University |
| Correspondent: | Click to Email |
Electronic transport properties of ZnO nanowire transistors were studied with atomic force microscope (AFM). The nanowire transistors were fabricated with ebeam lithography and characterized in a probing system embedded in the AFM. Clear gate dependence was observed in the source-drain current by using the non-local back-gate in the transistor. When Ti-Pt-coated AFM tip was used as a local and mobile gate, it was observed that the gating behavior is strongly dependent on the position of the local gate. The transistor could be made on and off repeatedly with the AFM tip locating above the nanowire heterojunction, implying that the active region in the transistor behavior is mostly confined to the small junction area.