AVS 54th International Symposium
    Nanometer-scale Science and Technology Tuesday Sessions
       Session NS-TuP

Paper NS-TuP1
Orderly Fabrication of Nanometer-Scaled Triangular Structure using Bridge Phenomenon of Polystyrene Beads

Tuesday, October 16, 2007, 6:00 pm, Room 4C

Session: Nanometer-scale Science and Technology Poster Session I
Presenter: B.K. Lee, Sungkyunkwan University, Republic of Korea
Authors: B.K. Lee, Sungkyunkwan University, Republic of Korea
K.S. Kim, Sungkyunkwan University, Republic of Korea
J.H. Lee, Sungkyunkwan University, Republic of Korea
N.H. Kim, Sungkyunkwan University, Republic of Korea
Y.H. Roh, Sungkyunkwan University, Republic of Korea
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Recently, nanometer-scaled materials have used for fabrication of nanostructure. Polystyrene bead (PSb) has many advantages for fabrication of nanostructure. For example, the PSb could fabricate the particular pattern array structures using for its self-assembled monolayer property. The PSb could be integrated with the established semiconductor process technologies because the PSb has excellent compatibility with silicon substrate. In this experiment, a spin coating was used for well-ordered array of the PSb. The PSb could be reduced its size using an oxygen plasma ashing process. During the plasma ashing process, the bridge phenomenon was occurred between the adjacent PSbs according to the plasma ashing conditions. The main reason for the occurrence of PSb bridges during the plasma ashing process is estimated that the PSb on the silicon surface was not sufficiently ashed by plasma. The ashed PSbs showed the triangular structures and the adjacent bridge distance was under 35 nm. The metal thin film was deposited on the bridges of the PSbs and then the PSbs as a deposition mask were removed by ultra sonication process. After the metal deposition on the ashed PSbs mask, we could obtain the nanometer-scaled triangular island less than 30 nm with the well-ordered array. Consequently, the triangular island would be applied to the nanometer-scaled devices such as single-electron transistor and biosensors.