AVS 54th International Symposium
    Nanometer-scale Science and Technology Thursday Sessions
       Session NS-ThP

Paper NS-ThP17
Light Emission from STM Tunneling Junction on Ag Films Grown on Si(111) Surface

Thursday, October 18, 2007, 5:30 pm, Room 4C

Session: Nanometer-Scale Science & Techology Poster Session II
Presenter: J. Woo, Inha University, South Korea
Authors: J. Woo, Inha University, South Korea
H. Shim, Inha University, South korea
G. Lee, Inha University, South Korea
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Detection of lights emitted from the STM tunneling junction has been developed as one of the local spectroscopic method to probe optical properties of surfaces. Recently, we set up the STM with light detection apparatus which uses an optical fiber for collection of the emitted light from the tunneling junction. We obtained STM-induced light emission spectra emitted from Ag surfaces grown in two different forms on a Si(111)-7x7 surface. As characterized by STM images, films with flat terraces are grown on a 7x7 surface of Si(111), while Ag clusters with varying sizes are formed on a H/Si(111)-1x1 surface. The light emission spectra shows peaks at the energy range of 2.3~2.7 eV. The peak positions in the emission spectra remain the same for different tunneling bias voltages, indicating that the emission is induced through inelastic tunneling. The detected light emission is interpreted as due to the decay of a tip-induced plasmon (TIP) which is confined between the tip and the surface. The differences in the peak position and in the energy broadening are attributed to the difference in roughness and in shape. Comparison of the two surfaces and discussion will be made based on the theory of light emission from TIP.