Paper NS-ThP14
Observation of Si/Co/Cu/Co Surface and Interface Processes for Nanostructure Formation by Scanning High Electron Energy Diffraction

Thursday, October 18, 2007, 5:30 pm, Room 4C

We observe the oxidation process on clean Si surfaces using high-resolution scanning reflection electron diffraction and form nanostructures on them, through focused electron-beam (EB) induced surface reactions. Si thermal oxidation occurs layer by layer, and the interface between the oxide film (<1.5 nm thickness) and Si substrate becomes atomically abrupt. When the sample is heated to 700-800 °C, resulting in the exposure of a clean Si substrate. The typical width of the clean Si `open windows' is about 10 nm. Using selective reactions during heating after the deposition of Si and Co films on the patterned samples, Si and Co nanoislands with 25 nm size are formed on Si surfaces.

Magnetic of surface and ultrathin film.