AVS 54th International Symposium
    Nanometer-scale Science and Technology Thursday Sessions
       Session NS-ThP

Paper NS-ThP10
Growth of Conducting Polypyrrole on Nanometer-Scaled Holes Array by Nanosphere Lithography

Thursday, October 18, 2007, 5:30 pm, Room 4C

Session: Nanometer-Scale Science & Techology Poster Session II
Presenter: K.S. Kim, Sungkyunkwan University, Republic of Korea
Authors: K.S. Kim, Sungkyunkwan University, Republic of Korea
H.K. Moon, Sungkyunkwan University, Republic of Korea
B.K. Lee, Sungkyunkwan University, Republic of Korea
N.H. Kim, Sungkyunkwan University, Republic of Korea
Y.H. Roh, Sungkyunkwan University, Republic of Korea
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Conducting polymers are attractive materials that could be used at all levels of microelectronics as alternatives for metal and semiconductors. Particularly, polypyrrole is one of the most promising conducting polymers because of its ease of synthesis, environmental stability and higher sensitivity. Additionally, through combination with nano-fabrication, this conducting polymer will provide a valuable method of large-area, easy fabrication of nanometer-scaled conducting polymer patterns that would be useful in polymer-based electronics. In this work, we have used nanosphere lithography technique using polystyrene beads and oxygen plasma ashing technique. Using nanosphere lithography, oxygen plasma ashing and chemical vapor deposition, we could fabricate the nanometer-scaled holes (< 50 nm) array on the gold coated silicon substrate. The fabricated nanometer-scaled holes are well-ordered and have high density. The polypyrrole was successfully grown on the nanometer-scaled holes by electrochemical polymerization. We confirmed that the polypyrrole was grown toward the vertical direction of the substrate by AFM and SEM. The C-V measuring of obtained polypyrrole arrays was performed. The obtained electrical and geometrical properties of polypyrrle were superior to use electrical sensors. These results will also open the possibilities to fabricate the unique tools for the highly aligned emitters, diode and vertical-type field effect transistors.