AVS 54th International Symposium
    Nanometer-scale Science and Technology Monday Sessions
       Session NS-MoA

Paper NS-MoA8
Multi-Island Single-Electron Transistors Made by Lithographic Contacting of Gold-Nanocrystal Chains

Monday, October 15, 2007, 4:20 pm, Room 616

Session: Nanoscale Assembly and Manipulation II
Presenter: D.N. Weiss, Washington Technology Center
Authors: D.N. Weiss, Washington Technology Center
X. Brokmann, CNRS, France
L.E. Calvet, CNRS, France
M.A. Kastner, Massachusetts Institute of Technology
M.G. Bawendi, Massachusetts Institute of Technology
Correspondent: Click to Email

We demonstrate a fabrication scheme that bridges the dimensional gap between lithographic dimensions and nanocrystal sizes. The method involves lithographic contacting of previously self-assembled, alkanethiol-coated nanocrystal chains. Because one nanocrystal is incorporated into the edge of the larger electrode, all of the important tunnel junctions are defined by self-assembly rather than lithography. This method allows the fabrication of one-dimensional island arrays, similar to those used for metrology, with predictable electronic characteristics. Specifically, we show that the electronic behavior of a double-island device can be fully explained using the standard theory of Coulomb blockade, with very few adjustable parameters.