| AVS 54th International Symposium | |
| Nanometer-scale Science and Technology | Wednesday Sessions |
| Session NS+EM-WeM |
| Session: | Nanoscale Devices and Nanowires I |
| Presenter: | R.L. Woo, University of California, Los Angeles |
| Authors: | R.L. Woo, University of California, Los Angeles Y. Kobayashi, Penn State University T. Mallouk, Penn State University R.F. Hicks, University of California, Los Angeles |
| Correspondent: | Click to Email |
Compound semiconductor nanowires exhibit promising properties for high-speed nanoelectronic devices. However, in order to realize their full potential, growth processes must be developed for the precise control of the nanowire shape, density, uniformity, and crystalline quality. In this study, we report on the fabrication of indium phosphide nanowires on silicon (100) and (111) by metalorganic vapor-phase epitaxy. Nanoscale indium droplets were used instead of gold catalyst to nucleate wire deposition. High-resolution transmission electron microscopy with selected area electron diffraction have revealed that the InP nanowires are free of crystal defects and grow along either the <110> or the <113> axis. This may be contrasted to gold catalyze growth, where the preferential orientation is <111>, and there is a relatively high density of stacking faults. Through careful control of the substrate preparation and the MOVPE process conditions, it has been possible to grow vertical InP nanowires of uniform diameter and lengths over 1.0 micron. At the meeting, we will present data on the novel electrical and optical properties of the indium phosphide nanowires.