| AVS 54th International Symposium | |
| Nanomanufacturing Topical Conference | Wednesday Sessions |
| Session NM-WeM |
| Session: | Nanomanufacturing for Information Technologies |
| Presenter: | H.J. Kim, Sungkyunkwan University, Korea |
| Authors: | H.J. Kim, Sungkyunkwan University, Korea Y.H. Roh, Sungkyunkwan University, Korea B. Hong, Sungkyunkwan University, Korea |
| Correspondent: | Click to Email |
Nanowires, semiconducting nanowire, carbon nanotube (CNT) and deoxyribonucleic acid (DNA), have been extensively investigated to obtain highly ordered electronic components for nanocircutitry and/or nanodevices. However, there are difficulties to apply them to nanodevices because of and aligning them with uniform interval on specific location and high contact resistance between metal electrodes and nanowire. We report a new method to carefully control the interval of DNA-templated gold nanowires (AuNWs) using surface-patterning techniques. In this technique, a process to form parallel- and latticed-nanostructures involves three steps: (1) nano-road was generated on oxide surface, chemically treated with (aminopropyl)triethoxysilane (APS) which has a NH3+ terminal group, patterned by electron beam lithography (2) ?-DNA molecules were stretched and aligned on chemical nano-road by tilting techniques. (3) AuNWs were formed by the electrostatic interaction between DNA and gold nanoparticles. By the combination of a tilting technique and surface-patterning technique, we could selectively align ?-DNA molecules and AuNWs by chemical nano-roads of 500 nm interval on Si substrate. We used atomic force microscopy (AFM) to analyze the configuration of AuNWs.