| AVS 54th International Symposium | |
| Renewable Energy Science & Technology Topical Conference | Wednesday Sessions |
| Session EN+TF+SS-WeA |
| Session: | Photovoltaics, Fuel Cells, and Alternative Energy Materials and Applications |
| Presenter: | T.L. Williamson, Los Alamos National Laboratory |
| Authors: | T.L. Williamson, Los Alamos National Laboratory M.A. Hoffbauer, Los Alamos National Laboratory N. Miller, Lawrence Berkeley National Laboratory R.E. Jones, Lawrence Berkeley National Laboratory K.M. Yu, Lawrence Berkeley National Laboratory P. Flanigan, University of California, Berkeley J. Wu, University of California, Berkeley J.W. Ager, Lawrence Berkeley National Laboratory Z. Liliental-Weber, Lawrence Berkeley National Laboratory E.E. Haller, Lawrence Berkeley National Laboratory W. Walukiewicz, Lawrence Berkeley National Laboratory |
| Correspondent: | Click to Email |
The different optimum growth temperatures for the group III-nitride compounds (e.g. GaN >900C and InN ~550C) make the growth of In-rich and fully compositionally graded InGaN films by MOCVD or MBE a considerable technological challenge. Recently, energetic neutral atomic-beam lithography & epitaxy (ENABLE) has been developed at LANL that makes possible isothermal low-temperature growth of high-quality GaN and InxGa1-xN alloys over the entire composition range (0