| AVS 54th International Symposium | |
| Electronic Materials and Processing | Tuesday Sessions |
| Session EM-TuM |
| Session: | Molecular Electronics |
| Presenter: | W. Li, Simon Fraser University, Canada |
| Authors: | W. Li, Simon Fraser University, Canada M.A. Kuikka, Simon Fraser University, Canada H.Z. Yu, Simon Fraser University, Canada K.L. Kavanagh, Simon Fraser University, Canada |
| Correspondent: | Click to Email |
The effect of molecular modification of metal-Si diode junctions has been investigated by electrical and structural measurements at both the macroscale and the nanoscale. Molecular junctions prepared with carbon-silicon bonded, n-alkyl monolayers and thermally evaporated gold contacts yield identical barrier heights and ideality factors irrespective of the alkyl chain length and end-group of the molecular layer. Nanoscale electrical and structural measurements, using ballistic emission electron microscopy (BEEM), and transmission electron microscopy (TEM), indicate laterally uniform penetration of deposited gold atoms into the junctions except for thiol-terminated monolayers where BEEM transmission is laterally non-uniform and TEM shows a continuous interfacial layer. In all cases, average BEEM transmission is reduced by the presence of a molecular layer with the largest effects also observed for the thiol terminated system.