| AVS 54th International Symposium | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM-ThA |
| Session: | High-K/High Mobility Substrates and Power Electronics |
| Presenter: | F.S. Aguirre-Tostado, University of Texas at Dallas |
| Authors: | F.S. Aguirre-Tostado, University of Texas at Dallas C. Hinkle, University of Texas at Dallas K.J. Choi, University of Texas at Dallas M. Milojevic, University of Texas at Dallas S.J. McDonnell, University of Texas at Dallas J. Kim, University of Texas at Dallas M.J. Kim, University of Texas at Dallas E. Vogel, University of Texas at Dallas R.M. Wallace, University of Texas at Dallas |
| Correspondent: | Click to Email |
Scaling and performance of integrated circuits has been pushed to the limit where the substitution of Si itself by higher mobility channel materials. Bulk electron mobilities for GaAs and InGaAs are well above those obtained for Si. At room temperature, the electron mobility of InGaAs exceeds the 10,000 cm2/V-s making this material a good candidate for high-performance logic applications. In this paper we will describe chemical, structural and electrical properties of high-κ dielectrics on InGaAs channels. The chemistry and structural properties of LaAlO3, HfAlO3 and HfO2 on InGaAs will be presented using in-situ XPS and LEISS analysis as well as HRTEM and XRD analysis. The thermal stability for relevant thermal budgets associated with dopant activation in a surface channel MOSFET InGaAs based device is examined in view of the electrical characteristics of MOS capacitors. This work is supported by the MARCO MSD Focus Center.