| AVS 54th International Symposium | |
| Electronic Materials and Processing | Monday Sessions |
| Session EM-MoM |
| Session: | Organic Materials and Devices |
| Presenter: | L.J. Richter, National Institute of Standards and Technology |
| Authors: | L.J. Richter, National Institute of Standards and Technology A.J. Moad, National Institute of Standards and Technology B.H. Hamadani, National Institute of Standards and Technology O.D. Jurchescu, National Institute of Standards and Technology D.J. Gundlach, National Institute of Standards and Technology S. Subramanian, University of Kentucky J.E. Anthony, University of Kentucky |
| Correspondent: | Click to Email |
Considerable interest has developed in the potential of macro-electronics enabled by low-cost manufacturing techniques such as roll-to-roll printing. Solution-processable small molecule based semiconductor films are emerging as a viable candidate for the active layer in thin film transistors (TFTs). The performance of TFTs fabricated from fluorinated 5,11-Bis(triethylsilylethynyl)anthradithiophene (diF-TESADT) are strongly dependent on processing conditions and the chemical treatment of the contacts. High performance devices can be fabricated with Au contacts treated with perfluorinated-bezenethiol PFBT. We report on the structure of thin films of diF-TESADT, formed on both Au and SiO2 substrates, as a function of substrate treatment and film thickness. Both spectroscopic ellipsometry and infrared absorption are use to assess the molecular orientation in the films. In films formed on PFBT treated Au, the orientation is found to be consistent with the bulk crystal structure, with a near optimal orientation of the pi-stacked conjugated cores in the channel of the transistor, consistent with the observed good device performance.