| AVS 54th International Symposium | |
| Electronic Materials and Processing | Monday Sessions |
| Session EM-MoM |
| Session: | Organic Materials and Devices |
| Presenter: | H.H. Lee, Seoul National University, Korea |
| Authors: | H.H. Lee, Seoul National University, Korea S.Y. Park, Seoul National University, Korea K.H. Kim, Seoul National University, Korea T. Kwon, Seoul National University, Korea |
| Correspondent: | Click to Email |
An organic interlayer between source/drain metal and semiconductor is introduced for the purpose of improving the performance of pentacene-based organic thin film transistor (OTFT). The formation and patterning of both the interlayer and the source/drain electrode is accomplished by a one-step bilayer transfer with 'rigiflex' lithography. The interlayer organic material should be chosen in such a way that the HOMO level of the organic lies between the metal work function and the HOMO level of the organic semiconductor. It is shown that the use of the interlayer of m-MTDATA for the cop-contact OTFT results in a more than one order of magnitude improvement in the effective mobility and also in the on-off current ratio. The main reason for the improvement can be attributed to a recuction in resistance.