| AVS 54th International Symposium | |
| Electronic Materials and Processing | Tuesday Sessions |
| Session EM+NS-TuA |
| Session: | Semiconductor Nanostructures for Electronics and Optoelectronics II |
| Presenter: | K.T. Leung, University of Waterloo, Canada |
| Authors: | D. Pradhan, University of Waterloo, Canada K.T. Leung, University of Waterloo, Canada |
| Correspondent: | Click to Email |
Vertically grown ZnO nanowalls, with typical dimensions of 40-80 nm thick and several micrometers wide, were electrodeposited on an ITO-glass substrate at 70 °C. XRD study shows that these nanowalls have the wurtzite structure and are highly crystalline. The corresponding Raman and photoluminescence spectra further indicate the presence of oxygen deficiency. These ZnO nanowalls exhibit excellent field emission performance, with not only a considerably lower turn-on field of 3.6 V/μm (at 0.1 μA/cm2) but also a higher current density of 0.34 mA/cm2 at 6.6 V/μm than most of ZnO nanowires and other one-dimensional nanostructures reported to date. We will also discuss a plausible growth mechanism for these nanowalls, and our recent work on the growth of these and other novel ZnO two-dimensional nanostructures on ITO-plastics.