| AVS 54th International Symposium | |
| Electronic Materials and Processing | Tuesday Sessions |
| Session EM+NS-TuA |
| Session: | Semiconductor Nanostructures for Electronics and Optoelectronics II |
| Presenter: | K.L. Kavanagh, Simon Fraser University, Canada |
| Authors: | Z.L. Bao, Simon Fraser University, Canada K.L. Kavanagh, Simon Fraser University, Canada A.S. Arrott, Simon Fraser University, Canada A.A. Talin, Sandia National Laboratories |
| Correspondent: | Click to Email |
We report the electrodeposition of epitaxial FexNi(1-x) films on n-GaAs (001) substrates from aqueous metal ammonium sulphate solutions. Structural measurements using x ray diffraction show that the films have single crystalline BCC or FCC structure at Fe and Ni-rich compositions, respectively. The ratio of Fe concentration in the FCC films to that in the electrolyte is surprisingly close to unity (1.1). BCC FexNi(1-x)/GaAs diodes have constant Schottky barrier heights independent of Fe composition consistent with a constant interfacial composition while the FCC Ni-rich alloys barriers increase with increasing Ni composition consistent with room temperature reactions.