| AVS 54th International Symposium | |
| Electronic Materials and Processing | Monday Sessions |
| Session EM+NS-MoA |
| Session: | Semiconductor Nanostructures for Electronics and Optoelectronics I |
| Presenter: | P.-Y. Lai, National Cheng Kung University, Taiwan |
| Authors: | P.-Y. Lai, National Cheng Kung University, Taiwan J.-S. Chen, National Cheng Kung University, Taiwan |
| Correspondent: | Click to Email |
In recent years, organic nonvolatile memory devices have attracted much attention due to its high potential for fabricating high density, low cost and flexible electronic components. In this work, we have fabricated an organic memory consisting of gold nanoparticles and polystyrene sandwiched between aluminum (Al) electrodes. The gold nanoparticles capped with three different carbon chain lengths of the alkanethiol ligand are prepared by the two-phase arrested growth method. The pristine device, which is initially at a low-conductivity state, exhibits an abrupt increase of current when the device is scanned up to the certain voltage. The high-conductivity state can be returned to the low-conductivity state by applying a positive voltage. The length of the alkanethiol which encapsulates gold nanoparticles affects the distribution of threshold voltage to turn on the memory device. The carbon chain length of alkanethiol varies the electron tunneling ability due to the modification of energy barrier. The results correlate the length of the alkanethiol with switching speed, cyclic write-read-erase-read times, and retention time of memory devices will also be discussed.