AVS 54th International Symposium
    Biomaterial Interfaces Wednesday Sessions
       Session BI-WeM

Paper BI-WeM4
GaN Nanowires for DNA-Sensing Applications

Wednesday, October 17, 2007, 9:00 am, Room 609

Session: Nano-Engineered Biointerfaces
Presenter: L.-C. Chen, National Taiwan University
Authors: C.P. Chen, National Taiwan University
A. Ganguly, National Taiwan University
C.H. Wang, National Taiwan University
L.-C. Chen, National Taiwan University
C.W. Hsu, Academia Sinica, Taiwan
Y.-K. Hsu, Academia Sinica, Taiwan
K.-H. Chen, Academia Sinica, Taiwan
Correspondent: Click to Email

A novel DNA-sensing system based on GaN nanowires (NWs) is presented coupled with their electrochemical impedance and photoluminescence measurements. GaN is well established now for a variety of optoelectronic applications. However, while its inherent bio-compatibility has also been recognized, its application as bio-sensors has been surprisingly lacking till date. Meanwhile, one-dimensional nanostructures have attracted huge interest as potential building blocks for the future nanoelectronic devices. In this report, GaN NWs are used as a transducer for DNA-sensors, by immobilizing single-strand DNA (ssDNA) molecules through covalent binding using organosilane linker (MPTS). The MPTS-modified GaN NWs exhibited an electrochemical window remarkably wider than those of boron-doped diamond or carbon nanotubes reported to date. The immobilization of ssDNA and the subsequent hybridization to double-strand DNA (dsDNA) were confirmed using confocal microscope. Electrochemical impedance measurement showed that interfacial electron-transfer resistance (Ret), from solution to transducer surface, increased significantly when pristine GaN NWs were immobilized with ssDNA, along with a formation of additional semicircle region at lower frequency in Nyquist plot. The unique appearance of double-semicircle region for ssDNA-immobilized NWs, compared to single-semicircle region for pristine GaN NWs, leads to the idea of formation of double-capacitance layer in series. The phenomenon is more prominent by the appearance of double peaks in the plot of phase angle vs. frequency (Bode plot), the second peak, formed after ssDNA-immobilization, showed further increase under the hybridization to dsDNA, and consequently reduces the overall impedance. Moreover, quenching behavior in photoluminescence of the GaN NWs was distinguishable for the ones immobilized with ssDNA and the same hybridized to dsDNA. Both the technique implies the ability of oligonucleotides, immobilized on the NW-surface, to interact with other biomolecules. The dual and label-free sensing capability in impedance and photoluminescence of GaN NWs makes them effective DNA transducers.