| AVS 54th International Symposium | |
| Applied Surface Science | Tuesday Sessions |
| Session AS-TuP |
| Session: | Aspects of Applied Surface Science Poster Session |
| Presenter: | H. Piao, General Electric Co. |
| Authors: | H. Piao, General Electric Co. J. Chera, General Electric Co. V. Robinson, General Electric Co. |
| Correspondent: | Click to Email |
The first part of this study focuses on the Nova ion gun beam tuning and the resulting XPS depth profiling measurements based on a standard SiO2/Si sample under different measuring conditions (ion beam energies from 0.5-4 keV). The quantitative evaluation of depth profiles in terms of sputter rate and depth resolution is discussed in more details. Changes of topography resulting from sputtering (roughness increases with sputtering time and depth) are also given a full attention. Then we report the advantages of the "float" mode with the production of relatively high current, low energy ion beams for enhanced depth resolution. Practical application of its depth profiling at interfaces is further elucidated by a typical example: SiOxNy(40nm)/SiOxCy(300nm)/SiOxNy(40nm) thin film. Finally, the improvement of the depth resolution by rotating the sample azimuthally is demonstrated.