Paper AS-TuP13
Plasma Enhanced Chemical Vapor Deposition of Trimethylsilane on Ion Vapor and Physical Vapor Deposited Aluminum

Tuesday, October 16, 2007, 6:00 pm, Room 4C

X-ray photoelectron spectra were obtained after each stage of a plasma deposition process with depth profiles to the aluminum layer. Spectra were obtained from Silicon wafers prior to processing; and after Argon ion plasma etching, vapor deposition of Aluminum, and DC plasma deposition of trimethylsilane. The samples were transferred under vacuum from the plasma chamber to a Kratos AXIS HS x-ray photoelectron spectrometer. Spectra were taken with magnesium K-alpha x-rays at a base pressure of 10^-9 Torr. Argon plasma etching removed carbon contamination, but left a residual oxide on the surface. Aluminum ion vapor deposition films were created at 100mTorr of Argon while physical vapor deposition films were created at a pressure of 10^-7 Torr. Results of a comparison between the ion vapor deposition and physical vapor deposition films will be presented. Various plasma deposition parameters were used to produce the trimethylsilane thin films.