| AVS 54th International Symposium | |
| Applied Surface Science | Thursday Sessions |
| Session AS-ThP |
| Session: | Aspects of Applied Surface Science II Poster Session |
| Presenter: | K. Archuleta, University of New Mexico, Sandia National Labs |
| Authors: | K. Archuleta, University of New Mexico, Sandia National Labs D.P. Adams, Sandia National Labs M.J. Vasile, Sandia National Labs J.E. Fulghum, University of New Mexico |
| Correspondent: | Click to Email |
Focused ion beam systems are increasingly utilized to fabricate tools, instruments, sensors and devices on the micrometer and nanometer scales. It is thus critical to understand the impact of FIB bombardment on the relevant properties of different materials. Despite many investigations of implanted gallium concentrations, surface roughening and microstructural changes, few studies have quantified the residual stress that results from FIB exposure. Medium energy (30 keV) focused gallium ion beam exposure of silicon results in a compressive inplane stress with a magnitude as large as 0.4 GPa. Experiments involve uniform irradiation of thin polysilicon microcantilevers (200 µm in length) over a range of dose from 1 x 1016 to 2 x 1018 ions/cm2. The radii of curvature of microcantilevers are measured using white light interferometry in atmosphere before and after ion beam exposure. The residual stress is determined from these radii and other measured properties using Stoney's Equation. The large residual stress is attributed to ion beam damage, microstructural changes and implantation.