AVS 51st International Symposium
    Science of Semiconductor White Light Topical Conference Wednesday Sessions
       Session WL+MS-WeA

Invited Paper WL+MS-WeA3
Interfaces in White Light-Emitting Structures

Wednesday, November 17, 2004, 2:40 pm, Room 304B

Session: Science of Semiconductor White Light II
Presenter: P.H. Holloway, University of Florida
Correspondent: Click to Email
Solid state devices have the promise to revolutionize the generation of white light. Solid state lighting has the potential to increase the efficiency of converting electricity to light by factors of two or more. The solid state structures are robust and hint at lifetimes of thousands of hours. Interfaces in these devices will play an important role in the fulfillment or collapse of this promise. The best performance to date has been achieved with light emitted from GaN-based LEDs which contribute a blue component to the emitted light, while simultaneously photo-pumping one or more phosphors which luminescence to provide a color spectrum with a good color rendering index. Critical interfaces in these structures range from the interfaces between the epitaxial layers, to the metal-semiconductor interfaces for ohmic contacts, to the matix-phosphor interface for light scattering and quenching luminescence. Our knowledge about these types of interfaces will be illustrated using examples of interfacial characterization and reactions, and the need for new understanding will be illustrated.