AVS 51st International Symposium
    Vacuum Technology Wednesday Sessions
       Session VT-WeM

Invited Paper VT-WeM5
Contamination Control in PECVD Processes

Wednesday, November 17, 2004, 9:40 am, Room 303D

Session: Contamination Control, Outgassing and Modeling
Presenter: B. Shin, Applied Materials
Authors: B. Shin, Applied Materials
Y. Uritsky, Applied Materials
T. Gessert, National Renewable Energy Laboratory
J.P. Benner, National Renewable Energy Laboratory
R. Childers, Hynix
H.S. Ryu, Hynix
Correspondent: Click to Email
The semiconductor industry is presently migrating chip manufacturing toward the sub-100-nm technology node, which is like splitting a strand of hair more than 1,000 times. Typically, more than 350 process steps are involved in fabricating these wafers, including depositions of oxides and nitrides by plasma-enhanced (PE) CVD, plasma etching steps, and final passivation. In this paper, we will examine the industry requirements on contamination control while optimizing process capability, throughput, and overall production efficiencies. The paper will also discuss how process integration and production automation are enabled by technologies involving in-situ cleaning and in-situ particle monitoring incorporated into the production tools, achieving enhanced process stability and production efficiency.