AVS 51st International Symposium
    Vacuum Technology Tuesday Sessions
       Session VT-TuA

Invited Paper VT-TuA7
Vacuum Microelectronic Devices and Vacuum Requirements

Tuesday, November 16, 2004, 3:20 pm, Room 303D

Session: Special Session at the 51st International AVS Symposium: "Fleming Centenary Session: The Birth and Evolution of Electronics"
Presenter: G.E. McGuire, International Technology Center
Authors: G.E. McGuire, International Technology Center
O.A. Shenderova, International Technology Center
T. Tyler, International Technology Center
Correspondent: Click to Email
With the emergence of microfabrication and thin film deposition techniques developed by the semiconductor industry, it became apparent that miniature vacuum microelectronic devices could be developed. Using approaches as diverse as controlled evaporation, chemical etching (both wet isotropic and anisotropic and dry plasma etching) and controlled oxidation, sharp tips were formed with a radius of less than 50 nm. When integrated with a gate electrode, field enhancement at the tip showed the promise of very high field emission electron currents especially when arrays of >1 million tips per cm@super 2@ could be produced. Even though currents above a milliamp have been achieved, vacuum microelectronic devices have not been adapted into widespread use. The vacuum environment of the device leads to changes in emission performance and premature failure that has limited the acceptance of the devices. Numerous approaches have been explored to improve and maintain the vacuum environment of the devices and enhance the vacuum conductance. In addition, device structures have been proposed that are less sensitive to the vacuum level and less susceptible to failure. An overview of these issues will be provided from a historical perspective.