AVS 51st International Symposium
    Thin Films Tuesday Sessions
       Session TF2-TuM

Paper TF2-TuM8
Molybdenum Atomic Layer Deposition Using MoF@sub 6@ and Si@sub 2@H@sub 6@

Tuesday, November 16, 2004, 10:40 am, Room 303C

Session: ALD and Applications
Presenter: G.B. Rayner, Jr., University of Colorado
Authors: G.B. Rayner, Jr., University of Colorado
S.M. George, University of Colorado
Correspondent: Click to Email
Although many binary materials have been grown using atomic layer deposition (ALD) techniques, the growth of most single-element metals has been difficult. Tungsten (W) ALD has been demonstrated earlier using WF@sub 6@ and Si@sub 2@H@sub 6@ as reactants. In this study, we extend a similar surface chemistry strategy for Mo ALD. Auger electron spectroscopy (AES) was used to monitor the nucleation and growth during Mo ALD on thin SiO@sub 2@ films thermally grown on Si(100) substrates. Using MoF@sub 6@ exposures of 8 x 10@super 5@ L and Si@sub 2@H@sub 6@ exposures of 4 x 10@super 6@ L at 200°C, the Mo ALD was observed by the attenuation of the O(KLL) AES signal and growth of the Mo(MNN) AES signal. Mo ALD nucleation on SiO@sub 2@ required 10-15 MoF@sub 6@/Si@sub 2@H@sub 6@ reactant cycles. The Si(LMM) AES signal oscillated dramatically during the sequential MoF@sub 6@ and Si@sub 2@H@sub 6@ exposures. No Si(LMM) AES signal was observed following the MoF@sub 6@ exposures that deposit MoF@sub x@ surface species. Large Si(LMM) AES signals were monitored after the Si@sub 2@H@sub 6@ exposures that strip off the fluorine and deposit SiH@sub y@F@sub z@ surface species on the growing Mo surface. Mo ALD may be important for the fabrication of Mo/Si Bragg mirrors for extended ultraviolet (EUV) lithography.