AVS 51st International Symposium
    Thin Films Wednesday Sessions
       Session TF-WeM

Paper TF-WeM11
Film Stress and Discharge Properties of MgO protective layer of AC-PDP

Wednesday, November 17, 2004, 11:40 am, Room 303C

Session: Optical Thin Films
Presenter: M.J. Lee, Seoul National University, Korea
Authors: M.J. Lee, Seoul National University, Korea
S.Y. Park, Seoul National University, Korea
S.H. Moon, Seoul National University, Korea
S.G. Kim, Seoul National University, Korea
H.J. Kim, Seoul National University, Korea
Correspondent: Click to Email
To increase the lifetime of PDP (Plasma Display Panel), MgO thin films are applied on dielectric layer to protect the dielectric layer from ion bombardments of plasma. Because MgO film is unlikely sputtered by ion bombardments and reduces the discharge voltage of PDP due to high secondary electron emission coefficient (@gamma@@sub i@), in turn less energy consumption. In this work, discharge characters of PDPs related to the stress formed in MgO thin films are investigated. MgO thin films were deposited on glass substrate with dielectric by e-beam evaporation in vacuum chamber, 5 x 10 @super -7@ Torr. Substrate temperature was varied from room temperature to 300°C, then annealing process is carried out at 300°C in vacuum chamber for 1hr and 3 hr respectively. The stresses of each sample were measured by laser scanning method to detect the substrate curvature change. To examine the effect of the change of stresses in MgO layers in different formation process on discharge character of real panel, firing voltage (V@sub f@ ) and sustaining voltage (V@sub s@ ) were observed. Surface roughness, morphology, and crystallographic preferred orientation of MgO films were also evaluated by XRD, AFM, SEM. And the impurities and hydrates of MgO surface before and after annealing were analyzed by XPS. MgO films on glass substrate have compressive stresses, which were varied according to deposition condition. After the annealing, the compressive stresses were released relatively, and definitely changed at specific temperature condition. The relation between the discharge characters and MgO thin film stress change and the relevancy with other properties of films was also evaluated.