AVS 51st International Symposium
    Thin Films Wednesday Sessions
       Session TF-WeA

Paper TF-WeA9
Electrical and Optical Properties of Reactive DC Magnetron Sputtered Silver Doped Indium Oxide Thin Films

Wednesday, November 17, 2004, 4:40 pm, Room 303C

Session: Transparent Conducting Oxides
Presenter: S. Srinivasan, Indian Institute of Technology, India
Authors: S. Srinivasan, Indian Institute of Technology, India
A. Subrahmanyam, Indian Institute of Technology, India
B. Ullash Kumar, Indian Institute of Technology, India
C.L. Nagendra, Indian Space Research Organization (ISRO), India
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In the present study, the role of oxygen in the formation of semiconducting Silver doped Indium oxide thin films is reported. This material has potential application in opto-electronic devices. The Silver doped Indium oxide thin films have been prepared on quartz and soda lime glass substrates at room temperature (300 K) by reactive DC Magnetron sputtering technique. The target is a pure Silver: Indium metal of composition 5: 95 At %. The oxygen flow rates in the growth chambers have been varied in the range of 12.5-14.0 sccm. The sputtering power is kept constant at 50 watts. The X-ray diffraction pattern shows the amorphous nature of these thin films. The electrical resistivity measured at room temperature increases (2.158Ã-10-2 â?"1.545Ã-10-1 â"¦-cm) with increasing oxygen flow rates. The films show an n-type behavior as shown by the Hall effect measurements. The Hall mobility is observed to be decreasing (12.071- 1.984 cm2v-1s-1) with increasing the oxygen flow rates. The thickness and refractive index of these films have been measured by using a spectro-photometric technique and the associated computation algorithm. The thickness of the film as determined by the technique is in the range 165-220 nm. The refractive index and absorption index of these films varies in the range 1.9- 2.1 and 0.01-0.02 over the spectral range from 2500-400nm. The work function has been measured on these films by contact potential method using Kelvin Probe. These data are being analyzed for an understanding of transport mechanism of these films.