AVS 51st International Symposium
    Thin Films Thursday Sessions
       Session TF-ThM

Paper TF-ThM4
A Self-Consistent Prediction of a Deposition of Cu Sputtered in a rf Magnetron Plasma

Thursday, November 18, 2004, 9:20 am, Room 303C

Session: Modeling & Fundamentals in Thin Film Deposition
Presenter: T.Y. Yagisawa, Keio University, Japan
Authors: T.Y. Yagisawa, Keio University, Japan
T.M. Mine, Keio University, Japan
S.K. Kuroiwa, Keio University, Japan
T.M. Makabe, Keio University, Japan
Correspondent: Click to Email
Magnetron sputtering has been widely used for thin film deposition in material processing. Radio frequency magnetron is practically employed in the field of dielectric material sputtering in addition to metal targets. In the rf magnetron sputtering system, neutral transport sputtered from a target is of first importance to deposit uniform film. In this paper, we have performed a self-consistent prediction of an rf magnetron plasma structure, velocity of ions impinging a target surface and its erosion profile, ejection neutral atom from the target, and neutral transport to the substrate by using a hybrid model consisting of PIC/MC model of electrons, RCT model of ions and MCS of sputtered neutrals. Typical example is shown in an rf sputtering of Cu target at 13.56 MHz in Ar at 5 mTorr. It is found that rf magnetron at low power supply is maintained mainly by the electron multiplication at the region where ExB is maximum, and auxiliary by the secondary electrons from the target in the region with ExB=0. The latter mechanism which is completely different from the dc magnetron sputtering will become dominant with increasing the dissipated power. Ion velocity distribution at the target surface shows a strong anisotropy due to low pressure and radial dependence. Flux and velocity distribution of sputtered neutrals incident on the substrate surface will be shown and discussed.