AVS 51st International Symposium
    Thin Films Monday Sessions
       Session TF-MoP

Paper TF-MoP5
Electrical Properties of Ni-Cr Thin Films Deposited by Co-Sputtering Method

Monday, November 15, 2004, 5:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: G.-B. Park, Yuhan College, Korea
Authors: G.-B. Park, Yuhan College, Korea
P.-K. Shin, Inha University, Korea
B.-J. Lee, Inha University, Korea
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For thin resistor films with low TCR (temperature coefficient of resistance) and high resistivity, we have prepared the thin films by co-sputtering method with pure Ni and Cr targets and studied the effect of the process parameters on the electrical properties. In sputtering process, DC/RF power and pressure are varied as controllable parameters. We have investigated the microstructure and measured the electrical properties. When the Ni/Cr ratios of the deposited thin films were 0.8â^¼1.5, the resistivity was 100â^¼120 µ @OMEGA@·ãZ. Below a Ni/Cr ratio of 1.5 (above 40[wt%] of Cr), the TCR became negative. The TCR of the thin films decreased from â?"30 ppm/°C to â?"75 ppm/°C with increasing Cr content. It is suggested that the composition ratio and electrical properties of thin films can be controlled by variation of sputter process parameters.