AVS 51st International Symposium
    Thin Films Monday Sessions
       Session TF-MoP

Paper TF-MoP23
Deposition of Ti(C,N) AND Zr(C,N) Thin Films by Plasma Assisted MOCVD and In-Situ Plasma Diagnostics with Optical Emission Spectroscopy

Monday, November 15, 2004, 5:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: J.-H. Boo, Sungkyunkwan University, South Korea
Authors: J.-H. Boo, Sungkyunkwan University, South Korea
S.W. Lee, Sungkyunkwan University, South Korea
Y.K. Cho, Sungkyunkwan University, South Korea
J.G. Han, Sungkyunkwan University, South Korea
Correspondent: Click to Email
Ti(C,N), Zr(C,N) films are synthesized by pulsed D.C. plasma assisted metalorganic chemical vapor deposition (PA-MOCVD) using metal-organic compounds of tetrakis diethylamido titanium and tetrakis diethylamido zirconium at 200 °C to 300 °C. H@sub 2@ and He+H@sub 2@ gases are used as carrier gases to compare plasma parameter. The effect of N@sub 2@ and NH@sub 3@ gases as reactive gas is also evaluated in reduction of C content of the films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. He and H@sub 2@ mixture as carrier gas is very effective in enhancing ionization of radicals, especially N@sub 2@ resulting is high hardness. However, NH@sub 2@ as reactive gas highly reduces formation of CN radical, there by decreasing C content of Ti(C,N) and Zr(C,N) films in a great deal. The hardness of film is obtained to be 1400 HK to 1700 HK depending on gas species used and bias voltage. Higher hardness can be obtained for H@sub 2@ and N@sub 2@ gas atmosphere and bias voltage of 600 V. Plasma surface cleaning using N@sub 2@ gas prior to deposition appear to increases adhesion of films on cold forming steel. The changes of plasma including radicals and film properties are illustrated in terms of carrier and reactive gases as well as pulsed power variation.