AVS 51st International Symposium
    Thin Films Monday Sessions
       Session TF-MoP

Paper TF-MoP11
Photoluminescence Behaviors of Eu-doped Sr@sub 2@SiO@sub 4@ Thin Film Phosphors Deposited by Pulsed Laser Deposition

Monday, November 15, 2004, 5:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: S.S. Yi, Silla University, Korea
Authors: S.S. Yi, Silla University, Korea
J.S. Bae, Pukyong National University, Korea
J.H. Jeong, Pukyong National University, Korea
J.H. Kim, Dongeui University, Korea
H. Park, Yonsei University, Korea
Correspondent: Click to Email
Sr@sub 2@SiO@sub 4@:Eu thin film phosphors were deposited on Al@sub 2@O@sub 3@ (0001) substrates by pulsed laser deposition. The Sr@sub 2@SiO@sub 4@:Eu thin films were grown at the various substrate temperatures and the different oxygen pressures. The crystallinity and surface morphology of the films were investigated using X-ray diffraction and atomic force microscope, respectively. And the photoluminescence spectra were measured at room temperature using a luminescence spectrometer and excitation by a broadband incoherent ultraviolet light source with a dominant excitation wavelength of 254 nm. The crystallinity and surface morphology of the films were influenced by the deposition conditions. It was found that the luminescence of the Sr@sub 2@SiO@sub 4@:Eu films is highly dependent on the crystallinity and surface roughness of the films. The Eu-doped Sr@sub 2@SiO@sub 4@ film shows two emission bands of 577 and 625 nm.