AVS 51st International Symposium
    Thin Films Monday Sessions
       Session TF-MoM

Paper TF-MoM9
Area-selective Atomic Layer Deposition for high-@kappa@ Dielectric Materials

Monday, November 15, 2004, 11:00 am, Room 303C

Session: ALD and Applications
Presenter: R. Chen, Stanford University
Authors: R. Chen, Stanford University
D.W. Porter, Stanford University
S.F. Bent, Stanford University
H.S. Kim, Stanford University
R. Sreenivasan, Stanford University
P.C. McIntyre, Stanford University
H. Jagannathan, Stanford University
Y. Nishi, Stanford University
Correspondent: Click to Email
Atomic layer deposition (ALD) is a technique that can be used to deposit a variety of materials. While ALD inherently provides nano-scale control of materials in the vertical direction, we are investigating an area-selective ALD technique that enables micro- and nano-scale definition of the lateral structure. Our research emphasizes controlling the substrate surface chemistry in order to impart spatial selectivity to ALD. Using a variety of analytical techniques, we show that functionalizing the surface with self-assembled monolayers (SAMs) can block the ALD chemistry in the growth of HfO@sub 2@ and ZrO@sub 2@, which are both high-@kappa@ materials for potential gate dielectrics. Specifically, we have investigated the surface chemistry needed to block ALD under the more extreme conditions used to deposit these metal oxide dielectrics from metal chloride and water precursors at temperature as high as 300 °C. The efficiency of blocking depends strongly on the quality of the SAMs and the chain length of the attached layer. The potential of the area-selective process for defining lateral structure has been examined using different patterning methods, including selective functionalization of patterned SiO@sub 2@/Si and soft lithography. Using a combination of image analysis by SEM and elemental analysis by scanning Auger microscopy, we demonstrate that the HfO@sub 2@ can be deposited with spatial selectivity. Other types of SAMs have also been investigated as monolayer resists against the HfO@sub 2@ ALD process on Si and Ge substrates. These monolayer films also exhibit good deactivation and selectivity.