AVS 51st International Symposium
    Thin Films Friday Sessions
       Session TF-FrM

Paper TF-FrM9
In-Situ Real-Time FT-IR Spectroscopy During APCVD: The Effect of B and P Dopants on SiO@sub 2@ Deposition

Friday, November 19, 2004, 11:00 am, Room 303C

Session: In-Situ/Ex-Situ & Real-Time Monitoring
Presenter: J.E. Crowell, University of California, San Diego
Authors: A. Effenberger, University of California, San Diego
L.D. Flores, University of California, San Diego
J.E. Crowell, University of California, San Diego
Correspondent: Click to Email
In-situ FT-IR spectroscopy has been used to explore the chemical boundary layer (CBL) region formed during atmospheric pressure chemical vapor deposition. Infrared spectra are recorded in 22 second intervals while varying the precursor gas composition. Using TEOS and ozone precursors in combination with borates and/or phosphites, thin films of boro-, phospho-, or borophosphosilicate glass are deposited onto Si wafers at 725K. Gas phase intermediates containing SiOH and BOH functionalities have been observed, and their variation with chemical composition has been investigated. A partial least squares principle component analysis has been used to quantify the reactive chemical mixtures and to evaluate the effect of dopants on the chemical kinetics.