AVS 51st International Symposium
    Surface Science Thursday Sessions
       Session SS3-ThM

Paper SS3-ThM6
Charge-Carrier-Stimulated Halogen Desorption from Si(100)-(2x1)

Thursday, November 18, 2004, 10:00 am, Room 213B

Session: Halogen and Oxygen Surface Reactions and Etching
Presenter: B.R. Trenhaile, University of Illinois at Urbana-Champaign
Authors: B.R. Trenhaile, University of Illinois at Urbana-Champaign
G.J. Xu, University of Illinois at Urbana-Champaign
A. Agrawal, University of Illinois at Urbana-Champaign
A.W. Signor, University of Illinois at Urbana-Champaign
K.S. Nakayama, University of Illinois at Urbana-Champaign
J.H. Weaver, University of Illinois at Urbana-Champaign
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Scanning tunneling microscopy was used to investigate spontaneous Br atom desorption from Br-terminated Si(100)-(2x1) as a function of temperature for 620 â?" 775 K. Significantly, analysis demonstrates that the activation energy and pre-exponential factor for the desorption depend on both the doping type and concentration. Moreover, the kinetic parameters are observed to follow the compensation (Meyer-Neldel) rule, and analysis yields a characteristic energy in good agreement with the phonon Debye energy for silicon. The activation energies correspond to the antibonding Si-Br levels, and we propose that thermally-excited charge carriers produce intermediate electronic states that lead to a novel form of electron-stimulated desorption. The desorption of other halogens from Si(100) will also be discussed.