AVS 51st International Symposium
    Surface Science Thursday Sessions
       Session SS3-ThM

Paper SS3-ThM5
Semiconductor Surface Chemical Functionalization for Microelectronics Applications: Gas Phase Chlorination of H-Passivated Silicon Surfaces

Thursday, November 18, 2004, 9:40 am, Room 213B

Session: Halogen and Oxygen Surface Reactions and Etching
Presenter: S. Rivillon, Rutgers University
Authors: S. Rivillon, Rutgers University
F. Amy, Rutgers University
Y.J. Chabal, Rutgers University
M.M. Frank, IBM
Correspondent: Click to Email
Controlling the surface chemistry of semiconductor surfaces is critical and particularly important for the growth of alternative dielectrics (i.e. other than SiO@sub 2@) on silicon surfaces. For high-k dielectrics growth using atomic layer deposition, for instance, the chemical nature of the surface determines the abruptness of the resulting interface. Chlorination of H-terminated surfaces is a powerful way to grow high-k dielectrics with minimum interfacial SiO@sub 2@ and needs to be studied. We used several different processes to chlorinate the surfaces: chlorine Cl@sub 2@ gas phase, wet chemistry and photochlorination, and investigated the resulting surfaces by infrared absorption spectroscopy looking directly at the Si-Cl modes. The surface termination is independent of the chlorination method: 1) H-terminated Si(111) surfaces are fully covered by chlorine and remain atomically flat meaning that chlorination processes do not change the surface morphology; 2) only partial chlorination of the Si(100) surface is achieved, with a high degree of disorder. The stability of both chlorinated surface has been studied under nitrogen (N@sub 2@) and in ambient atmosphere.