AVS 51st International Symposium
    Surface Science Monday Sessions
       Session SS2-MoM

Paper SS2-MoM6
Silicon Surface Chemistry of Substituted Triazines

Monday, November 15, 2004, 10:00 am, Room 210C

Session: Functionalization of Semiconductor Surfaces
Presenter: S.M. Casey, University of Nevada, Reno
Authors: S.M. Casey, University of Nevada, Reno
L.M. LeMond, University of Nevada, Reno
Correspondent: Click to Email
Deposition of substituted triazines onto the Si(100) surface was examined in order to investigate the initial stages of an organic molecular beam epitaxial growth approach to carbon nitride film formation. These reactions were probed under ultrahigh vacuum conditions using thermal desorption spectroscopy, Auger electron spectroscopy, and low-energy electron diffraction. Experiments reveal that the reactions of species such as 2-amino-1,3,5-triazine are self-limiting with a saturation coverage of about one molecule per four silicon surface atoms. Computational modeling of available reaction pathways was also performed using ab initio and density functional theory approaches. The results from these computations using cluster models of the silicon surface are consistent with the results from the experimental studies, and point to stable reaction products where the incident substituted triazine molecule bridges between two adjacent (within the same dimer row) silicon surface dimers.