AVS 51st International Symposium
    Surface Science Monday Sessions
       Session SS2-MoM

Invited Paper SS2-MoM3
Functionalization of Semiconductor Surfaces

Monday, November 15, 2004, 9:00 am, Room 210C

Session: Functionalization of Semiconductor Surfaces
Presenter: S.F. Bent, Stanford University
Authors: M.A. Filler, Stanford University
D.W. Porter, Stanford University
A. Kim, KAIST, Korea
J.A. Van Deventer, Stanford University
S.F. Bent, Stanford University
Correspondent: Click to Email
The growing importance of organic materials in electronic and optical technologies motivates the development of new attachment chemistries for combining organic layers with semiconductor substrates. We have investigated methods of functionalizing semiconductor surfaces by chemically reacting organic molecules at silicon and germanium surfaces in vacuum. These surfaces present intriguing templates for chemical reactions because the nature of the (100)-2x1 reconstructed surface of silicon and germanium yields dimers that can mimic the reactivity of organic functional groups. This behavior allows for the use of a wide variety of reactions to attach organic groups to the semiconductor surface. Our studies have explored the reactivity of a range of functional groups, including alkenes and dienes, amines, alcohols, carbonyls, nitriles, and isocyanates. The results of experimental and theoretical studies of the adsorption chemistry will be described in the context of several key mechanistic themes, including electrophilic/nucleophilic chemistry and [4+2], [3+2], and [2+2] cycloaddition reactions. Approaches for using these reactions for molecular layer deposition will be introduced, and some of the challenges in organic functionalization, including formation of inter- and intradimer products as well as coverage-dependent effects, will be discussed.