AVS 51st International Symposium
    Surface Science Monday Sessions
       Session SS2-MoM

Paper SS2-MoM1
Atomic-level Control of Chemical Properties of Si(100) with Dopant Impurities

Monday, November 15, 2004, 8:20 am, Room 210C

Session: Functionalization of Semiconductor Surfaces
Presenter: G.S. Hwang, The University of Texas at Austin
Authors: Y. Wang, The University of Texas at Austin
G.S. Hwang, The University of Texas at Austin
Correspondent: Click to Email
Atomic-level manipulation of surface chemical properties becomes necessary for the fabrication of ever smaller semiconductor devices and a wide range of future molecular devices. The electronic structure of semiconductor surfaces can be modified by surface reconstruction, defects, impurities, and adsorbates. This will in turn alter physical and chemical processes occurring on the surfaces. One could envisage atomistic control of surface reactivity by incorporating dopant impurities into the surface or subsurface. A detailed understanding of the role of dopants as possible reaction promoters or inhibitors will contribute greatly to finding a new and reliable way to construct desired organic function assembly on semiconductors for various chemical, biological, and electronic applications. Using density functional theory calculations, we have looked at the modification of Si(001) surface properties by incorporating Boron and Phosphorous atoms into the surface and subsurface layer. We have found that surface (or subsurface) dopants bring about a significant change in surface chemical properties by altering surface polarization. As a result, chemical reactions on a dopant-modified surface show a distinctively different feature from on the clean surface. In this talk, we will present i) the effect of subsurface Boron on the surface reactivity of Si(001) based on water and ammonia adsorption and ii) auto-catalyzed molecular nanostructure formation of styrene on Si(001) using Phosphorous as initiator and terminator.