AVS 51st International Symposium
    Surface Science Tuesday Sessions
       Session SS-TuP

Paper SS-TuP17
Epitaxial Cu Nanowire Arrays Grown on H-Si(110) using Glancing Angle Deposition

Tuesday, November 16, 2004, 4:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: H. Alouach, The University of Alabama
Authors: H. Alouach, The University of Alabama
G.J. Mankey, The University of Alabama
Correspondent: Click to Email
We report the growth of epitaxial nanowire arrays using the technique of glancing angle deposition with substrate rotation. Epitaxial copper nanowire arrays were deposited on H-terminated Si(110) using electron beam evaporation. The nanowire arrays were characterized with x-ray diffraction, atomic force microscopy and scanning electron microscopy. Individual nanowires were confirmed to be single crystal by examination with transmission electron microscopy. The epitaxial growth involves twin formation with the epitaxial orientation relationships: Cu(111)//Si(110) with Cu[1-10]//Si[001] and Cu[-110]//Si[001]. As the angle of incidence is increased, the Cu grows as isolated columns with a spacing that increases as the angle of incidence is increased. However, the thickness limit for epitaxial growth is reduced as the angle of incidence is increased, and it is approximately 300 nm for a deposition angle of 75°. The X-ray rocking curves for samples deposited at increasing polar angles show steadily improving crystal orientation up to a deposition angle of about 35°. Beyond 65° deposition angle, the rocking curves show split diffraction peaks indicating that there are two distinct orientations. In addition, the split peaks have a much lower FWHM. The observed behavior will be explained based on arguments involving unidirectional diffusion arising from adatom parallel momentum. This work was supported by the NSF.