AVS 51st International Symposium
    Surface Science Monday Sessions
       Session SS-MoP

Paper SS-MoP25
Plasma Base Ion Implantation Sterilization Technique and Ion Energy Estimation

Monday, November 15, 2004, 5:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: S. Watanabe, Soken Kogyo Co., Ltd, Japan
Authors: S. Watanabe, Soken Kogyo Co., Ltd, Japan
T. Tanaka, Hiroshima Institute of Technology, Japan
K. Shibahara, Hiroshima University, Japan
S. Yokoyama, Hiroshima University, Japan
T. Takagi, Hiroshima Institute of Technology, Japan
Correspondent: Click to Email
Plasma base ion implantation (PBII) with negative voltage pulses to the test specimen has been applied to the sterilization process as a technique suitable for three-dimensional work pieces. Pulsed high negative voltage (5μs pulse width, 300 pulses/s, -800 V to -13 kV) was applied to the electrode in this process at a gas pressure of 2.4 Pa of N@sub 2@. We found that the PBII process reduced the numbers of active Bacillus pumilus cell using N@sub 2@ gas self-ignitted plasma generated by only pulsed voltages. The number of bacteria survivors was reduced by 10@super -5@ x with 5 min exposure. As the ion energy is the most important processing parameter, a simple method to estimate the nitrogen ion energy calculated using distribution for nitrogen in Si implanted by PBII was developed. The implanted ion energy is discussed from the SIMS in depth profile.