AVS 51st International Symposium
    Advanced Surface Engineering Monday Sessions
       Session SE-MoA

Paper SE-MoA10
Ion Assisted Deposition of Zirconium Nitride using Balanced and Unbalanced Magnetron Sputtering

Monday, November 15, 2004, 5:00 pm, Room 303D

Session: Structure Control of Hard Coatings in Sputtering Processes
Presenter: S. Guruvenket, Indian Institute of Science, India
Correspondent: Click to Email
Zirconium nitride thin films were deposited on Si (111) substrates by balanced and unbalanced magnetron sputtering. The change in the preferred orientation of the deposited films was studied as a function of substrate bias voltage. ZrN films deposited by magnetron sputtering with out any bias voltage showed a preferred orientation of (111) where as, those deposited at higher bias voltages (above â?"60Volt) showed (200) as the preferred orientation. ZrN films deposited by unbalanced magnetron also showed a similar kind of transformation in the preferred orientation but the bias voltage required in this case was about -40V. Better quality films have been obtained with a resistivity value of 50 @micro ohm cm 1@ in unbalanced magnetron sputtering, where as, a resistivity of 63@micro ohm cm 2@ was obtained in case of magnetron sputtered ZrN thin films. The change in the surface roughness as the function of the bias voltage was also studied. @FootnoteText@ 1. @micro ohm cm 1@ 2. @micro ohm cm 2@.