AVS 51st International Symposium
    Semiconductors Tuesday Sessions
       Session SC-TuP

Paper SC-TuP10
Supermagnetron Plasma CVD of Amorphous CNx:H Films Using Rf Power-Ratio Control

Tuesday, November 16, 2004, 4:00 pm, Room Exhibit Hall B

Session: Poster Session
Presenter: H. Kinoshita, Shizuoka University, Japan
Authors: H. Kinoshita, Shizuoka University, Japan
R. Ikuta, Shizuoka University, Japan
K. Sakurai, Shizuoka University, Japan
Correspondent: Click to Email
Amorphous CNx:H films were deposited on lower electrode using i-C4H10/N2 supermagnetron plasma CVD. @footnote 1@ By a control of rf power-ratio, hard and soft CNx:H films were deposited at upper electrode rf power of 800W. Above the lower electrode rf power (LORF) of 40W, CNx:H films became hard and opaque. Below LORF of 20W, however, CNx:H films became soft and transparent. The optical band gap of hard film was below 0.8eV and that of soft film was above 1.9eV. Hardness of hard film was above 19GPa and that of soft film was about 7GPa. Electrical resistivity of hard film was low and that of soft film was high. Soft films showed white photoluminescence. @FootnoteText@ @footnote 1@H.Kinoshita and T.Murakami, J.Vac.Sci.Tecnol.A 20, (2002) 403.