AVS 51st International Symposium
    Semiconductors Tuesday Sessions
       Session SC-TuA

Paper SC-TuA7
Blue Photoluminescence of Si Nano-crystallites Embedded in Silicon Oxide

Tuesday, November 16, 2004, 3:20 pm, Room 304C

Session: Semiconductor Heteroepitaxy and Nanostructures
Presenter: G.-J. Kim, Yonsei University, Korea
Authors: G.-J. Kim, Yonsei University, Korea
J.H. Kim, Yonsei University, Korea
K.A. Jeon, Yonsei University, Korea
S.Y. Lee, Yonsei University, Korea
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Synthesis and luminescent characteristics of Si nano-crystallites are reported depending on deposition condition. Si nanocrystalline thin films on p-type (100) silicon substrate have been prepared by a pulsed laser deposition (PLD) technique using a Nd:YAG laser. The Si nano-crystallites with the average size of 2 nm are observed in the SiO@sub 2@ matrix. Strong blue photoluminescence has been observed at room temperature. The optical and structural properties of thin films have been investigated as a function of laser energy density, ambient gas pressure, annealing, and oxidation process. These results indicate that the blue photoluminescence of Si nano-crystallites is related to the quantum size effect of Si nanocrystallites.