AVS 51st International Symposium
    Semiconductors Thursday Sessions
       Session SC+EM-ThM

Paper SC+EM-ThM2
Realization of Mg(x=0.15)Zn(1-x=0.85)O based Metal-Semiconductor-Metal UV Detector on Quartz and Sapphire

Thursday, November 18, 2004, 8:40 am, Room 304B

Session: Wide Bandgap Semiconductors
Presenter: R. Vispute, Bluewave Semiconductors, Inc.
Authors: S. Hullavarad, University of Maryland
R. Vispute, Bluewave Semiconductors, Inc.
T. Venkatesan, University of Maryland
S. Dhar, University of Maryland
I. Takeuchi, University of Maryland
Correspondent: Click to Email
MgZnO is a novel oxide based UV sensitive material. The band gap of MgxZn1-xO can be tuned by varying the composition of Mg to achieve band gaps corresponding to UV-A, UV-B, UV-C regions of UV spectrum. This material is of significant importance for various applications in flame sensors, UV index monitors and missile plume detection. The interesting property that makes this material unique is its existence in multiple phases for different Mg compositions. This allows picking up desired Mg composition corresponding to suitable UV sensitive window and growing on lattice matched substrate. In this paper we present the growth of MgZnO on non-conventional substrates like quartz and on sapphire for comparison of the device reliability. MgZnO films are characterized by X-Ray Diffraction, UV-Visible spectroscopy and Rutherford Back Scattering - channeling techniques. We are reporting for the first time the highly oriented growth of MgZnO on quartz by Pulsed Laser Deposition technique with a RBS channeling yield of 50% showing highly ordering. The morphology of the films is studied by Atomic Force Microscopy. The metal-semiconductor-metal device was fabricated on the MgZnO film to study the device response under proper UV irradiation.