AVS 51st International Symposium
    Plasma Science and Technology Wednesday Sessions
       Session PS1-WeM

Paper PS1-WeM6
Deposition of Nanocomposite Layers for Ultralow Dielectric Applications

Wednesday, November 17, 2004, 10:00 am, Room 213A

Session: Plasma in Nanoscale Applications
Presenter: G.R. Alcott, TNO-TPD, The Netherlands
Authors: G.R. Alcott, TNO-TPD, The Netherlands
M. Creatore, Eindhoven University of Technology, The Netherlands
J. Linden, TNO-TPD, The Netherlands
M.C.M. van de Sanden, Eindhoven University of Technology, The Netherlands
Correspondent: Click to Email
As the dimensions of integrated circuit devices scale to smaller feature sizes, the resistance-capacitance (RC) delay of the metal interconnect will increasingly limit the performance of high speed logic chips. The integration of ultralow dielectric materials (k < 2.5) can reduce this problem and the use of the porous materials is now deemed necessary if the future targets of chip design are to be achieved [@footnote1@]. While many candidates for ultralow-k applications exist, many of the most promising are synthesized using wet chemical processes involving harmful solvents and multiple process steps. In this work a novel dual plasma reactor is used to simultaneously synthesize and incorporate porous nanometre sized particles into SiO@x@C@y@H@z@ layers. Porous nanoparticles and siloxane layers are synthesized from a TEOS/O@2@ and 1,2-bis(trimethyl)siloxyethane precursors respectively. Structure and composition of the nanocomposite layer produced are characterised using ESEM and infrared absorption spectroscopy. Thermal stability and electrical properties are determined to evaluate the thin films suitability in low-k dielectric applications. Dielectric constants as low as 1.82 ± 0.02 were achieved at 1 MHz. @FootnoteText@ @footnote1@ http://public.itrs.net.